Publication
Title
Intrinsic tailing of resistive states distributions in amorphous HfO_{x} and $TaO_{x}$ based resistive random access memories
Author
Abstract
 We report on the ineffectiveness of programming oxide-based resistive random access memory (OxRAM) at low current with a program and verify algorithm due to intrinsic relaxation of the verified distribution to the natural state distribution obtained by single-pulse programming without verify process. Based on oxygen defect formation thermodynamics and on their diffusion barriers in amorphous HfOx and TaOx, we describe the intrinsic nature of tailing of the verified low resistive state and high resistive state distributions. We introduce different scenarios to explain fast distribution widening phenomenon, which is a fundamental limitation for OxRAM current scaling and device reliability.
Language
English
Source (journal)
IEEE electron device letters
Publication
2015
ISSN
0741-3106
Volume/pages
36:8(2015), p. 769-771
ISI
000358570300011
Full text (Publisher's DOI)
UAntwerpen
 Faculty/Department Research group Publication type Affiliation Publications with a UAntwerp address
External links
 Web of Science
Record
 Identification Creation 20.07.2016 Last edited 14.11.2017 To cite this reference