Title
Intrinsic tailing of resistive states distributions in amorphous <tex>HfO_{x} </tex> and <tex>$TaO_{x}$</tex> based resistive random access memories Intrinsic tailing of resistive states distributions in amorphous <tex>HfO_{x} </tex> and <tex>$TaO_{x}$</tex> based resistive random access memories
Author
Faculty/Department
Faculty of Sciences. Chemistry
Publication type
article
Publication
Source (journal)
IEEE electron device letters
Volume/pages
36(2015) :8 , p. 769-771
ISSN
0741-3106
ISI
000358570300011
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
We report on the ineffectiveness of programming oxide-based resistive random access memory (OxRAM) at low current with a program and verify algorithm due to intrinsic relaxation of the verified distribution to the natural state distribution obtained by single-pulse programming without verify process. Based on oxygen defect formation thermodynamics and on their diffusion barriers in amorphous HfOx and TaOx, we describe the intrinsic nature of tailing of the verified low resistive state and high resistive state distributions. We introduce different scenarios to explain fast distribution widening phenomenon, which is a fundamental limitation for OxRAM current scaling and device reliability.
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