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Title
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Intrinsic tailing of resistive states distributions in amorphous HfO_{x} and based resistive random access memories
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Author
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Abstract
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| We report on the ineffectiveness of programming oxide-based resistive random access memory (OxRAM) at low current with a program and verify algorithm due to intrinsic relaxation of the verified distribution to the natural state distribution obtained by single-pulse programming without verify process. Based on oxygen defect formation thermodynamics and on their diffusion barriers in amorphous HfOx and TaOx, we describe the intrinsic nature of tailing of the verified low resistive state and high resistive state distributions. We introduce different scenarios to explain fast distribution widening phenomenon, which is a fundamental limitation for OxRAM current scaling and device reliability. |
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Language
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English
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Source (journal)
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IEEE electron device letters
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Publication
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2015
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ISSN
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0741-3106
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DOI
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10.1109/LED.2015.2448731
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Volume/pages
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36
:8
(2015)
, p. 769-771
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ISI
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000358570300011
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Full text (Publisher's DOI)
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