Publication
Title
Intrinsic tailing of resistive states distributions in amorphous HfO_{x} and based resistive random access memories
Author
Abstract
Language
English
Source (journal)
IEEE electron device letters
Publication
2015
ISSN
0741-3106
Volume/pages
36:8(2015), p. 769-771
ISI
000358570300011
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 20.07.2016
Last edited 23.01.2018
To cite this reference