Title
|
|
|
|
Can p-channel tunnel field-effect transistors perform as good as n-channel?
| |
Author
|
|
|
|
| |
Abstract
|
|
|
|
We show that bulk semiconductor materials do not allow perfectly complementary p- and n-channel tunnel field-effect transistors (TFETs), due to the presence of a heavy-hole band. When tunneling in p-TFETs is oriented towards the gate-dielectric, field-induced quantum confinement results in a highest-energy subband which is heavy-hole like. In direct-bandgap IIIV materials, the most promising TFET materials, phonon-assisted tunneling to this subband degrades the subthreshold swing and leads to at least 10x smaller on-current than the desired ballistic on-current. This is demonstrated with quantum-mechanical predictions for p-TFETs with tunneling orthogonal to the gate, made out of InP, In0.53Ga0.47As, InAs, and a modified version of In0.53Ga0.47As with an artificially increased conduction-band density-of-states. We further show that even if the phonon-assisted current would be negligible, the build-up of a heavy-hole-based inversion layer prevents efficient ballistic tunneling, especially at low supply voltages. For p-TFET, a strongly confined n-i-p or n-p-i-p configuration is therefore recommended, as well as a tensily strained line-tunneling configuration. (C) 2014 AIP Publishing LLC. |
| |
Language
|
|
|
|
English
| |
Source (journal)
|
|
|
|
Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
| |
Publication
|
|
|
|
New York, N.Y.
:
American Institute of Physics
,
2014
| |
ISSN
|
|
|
|
0003-6951
[print]
1077-3118
[online]
| |
DOI
|
|
|
|
10.1063/1.4891348
| |
Volume/pages
|
|
|
|
105
:4
(2014)
, 4 p.
| |
Article Reference
|
|
|
|
043103
| |
ISI
|
|
|
|
000341152600067
| |
Medium
|
|
|
|
E-only publicatie
| |
Full text (Publisher's DOI)
|
|
|
|
| |
Full text (open access)
|
|
|
|
| |
|