Publication
Title
Elucidating the effects of gas flow rate on an inductively coupled plasma and on the silicon etch rate, by a combined experimental and theoretical investigation
Author
Abstract
Experiments show that the etch rate of Si with SF6 inductively coupled plasma (ICP) is significantly influenced by the absolute gas flow rate in the range of 50600 sccm, with a maximum at around 200 sccm. Therefore, we numerically investigate the effects of the gas flow rate on the bulk plasma properties and on the etch rate, to obtain more insight in the underlying reasons of this effect. A hybrid Monte Carlofluid model is applied to simulate an SF6 ICP. It is found that the etch rate is influenced by two simultaneous effects: (i) the residence time of the gas and (ii) the temperature profile of the plasma in the ICP volume, resulting indeed in a maximum etch rate at 200 sccm.
Language
English
Source (journal)
Journal of physics: D: applied physics. - London
Publication
London : 2016
ISSN
0022-3727
Volume/pages
49:38(2016), 5 p.
Article Reference
385201
ISI
000384095900011
Medium
E-only publicatie
Full text (Publisher's DOI)
Full text (open access)
Full text (publisher's version - intranet only)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 30.08.2016
Last edited 17.10.2017
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