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Title
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Elucidating the effects of gas flow rate on an inductively coupled plasma and on the silicon etch rate, by a combined experimental and theoretical investigation
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Author
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Abstract
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| Experiments show that the etch rate of Si with SF6 inductively coupled plasma (ICP) is significantly influenced by the absolute gas flow rate in the range of 50600 sccm, with a maximum at around 200 sccm. Therefore, we numerically investigate the effects of the gas flow rate on the bulk plasma properties and on the etch rate, to obtain more insight in the underlying reasons of this effect. A hybrid Monte Carlofluid model is applied to simulate an SF6 ICP. It is found that the etch rate is influenced by two simultaneous effects: (i) the residence time of the gas and (ii) the temperature profile of the plasma in the ICP volume, resulting indeed in a maximum etch rate at 200 sccm. |
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Language
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English
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Source (journal)
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Journal of physics: D: applied physics. - London
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Publication
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London
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2016
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ISSN
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0022-3727
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DOI
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10.1088/0022-3727/49/38/385201
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Volume/pages
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49
:38
(2016)
, 5 p.
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Article Reference
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385201
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ISI
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000384095900011
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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Full text (open access)
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Full text (publisher's version - intranet only)
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