Publication
Title
15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors
Author
Abstract
A carefully chosen heterostructure can significantly boost the performance of tunnel field-effect transistors (TFET). Modelling of these hetero-TFETs requires a quantum mechanical (QM) approach with an accurate band structure to allow for a correct description of band-to-band-tunneling. We have therefore developed a fully QM 2D solver, combining for the first time a full zone 15-band envelope function formalism with a spectral approach, including a heterostructure basis set transformation. Simulations of GaSb/InAs broken gap TFETs illustrate the wide body capabilities and transparant transmission analysis of the formalism.
Language
English
Source (journal)
18TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2015)
Source (book)
2015 18th International Workshop on Computational Electronics (IWCE), SEP 02-04, 2015, W Lafayette, IN
Publication
New york : Ieee, 2015
Volume/pages
(2015), 4 p.
ISI
000380398200055
Number
978-0-692-51523-5
Full text (Publishers DOI)
Full text (open access)
UAntwerpen
Faculty/Department
Research group
Publication type
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 02.09.2016
Last edited 27.03.2017
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