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Title
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15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors
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Author
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Abstract
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| A carefully chosen heterostructure can significantly boost the performance of tunnel field-effect transistors (TFET). Modelling of these hetero-TFETs requires a quantum mechanical (QM) approach with an accurate band structure to allow for a correct description of band-to-band-tunneling. We have therefore developed a fully QM 2D solver, combining for the first time a full zone 15-band envelope function formalism with a spectral approach, including a heterostructure basis set transformation. Simulations of GaSb/InAs broken gap TFETs illustrate the wide body capabilities and transparant transmission analysis of the formalism. |
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Language
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English
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Source (journal)
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18TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2015)
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Source (book)
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2015 18th International Workshop on Computational Electronics (IWCE), SEP 02-04, 2015, W Lafayette, IN
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Publication
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New york
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Ieee
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2015
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ISBN
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978-0-692-51523-5
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978-0-692-51523-5
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DOI
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10.1109/IWCE.2015.7301988
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Volume/pages
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(2015)
, 4 p.
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ISI
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000380398200055
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Full text (Publisher's DOI)
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Full text (open access)
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