Title
Modeling and tackling resistivity scaling in metal nanowires Modeling and tackling resistivity scaling in metal nanowires
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
conferenceObject
Publication
New york :Ieee ,
Subject
Physics
Source (journal)
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Source (book)
International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 09-11, 2015, Washington, DC
Volume/pages
(2015) , p. 222-225
ISSN
1946-1569
ISBN
978-1-4673-7860-4
ISI
000380542400057
Carrier
E
Target language
English (eng)
Affiliation
University of Antwerp
Abstract
A self-consistent analytical solution of the multi-subband Boltzmann transport equation with collision term describing grain boundary and surface roughness scattering is presented to study the resistivity scaling in metal nanowires. The different scattering mechanisms and the influence of their statistical parameters are analyzed. Instead of a simple power law relating the height or width of a nanowire to its resistivity, the picture appears to be more complicated due to quantum-mechanical scattering and quantization effects, especially for surface roughness scattering.
E-info
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http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000380542400057&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848
Full text (open access)
https://repository.uantwerpen.be/docman/irua/685f8f/135046.pdf
Handle