Modeling and tackling resistivity scaling in metal nanowires
Faculty of Sciences. Physics
New york :Ieee
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 09-11, 2015, Washington, DC
, p. 222-225
University of Antwerp
A self-consistent analytical solution of the multi-subband Boltzmann transport equation with collision term describing grain boundary and surface roughness scattering is presented to study the resistivity scaling in metal nanowires. The different scattering mechanisms and the influence of their statistical parameters are analyzed. Instead of a simple power law relating the height or width of a nanowire to its resistivity, the picture appears to be more complicated due to quantum-mechanical scattering and quantization effects, especially for surface roughness scattering.