Publication
Title
Modeling and tackling resistivity scaling in metal nanowires
Author
Abstract
A self-consistent analytical solution of the multi-subband Boltzmann transport equation with collision term describing grain boundary and surface roughness scattering is presented to study the resistivity scaling in metal nanowires. The different scattering mechanisms and the influence of their statistical parameters are analyzed. Instead of a simple power law relating the height or width of a nanowire to its resistivity, the picture appears to be more complicated due to quantum-mechanical scattering and quantization effects, especially for surface roughness scattering.
Language
English
Source (journal)
International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]. - Piscataway, NJ
Source (book)
International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 09-11, 2015, Washington, DC
Publication
New york : Ieee, 2015
Volume/pages
(2015), p. 222-225
ISI
000380542400057
Number
978-1-4673-7860-4
Full text (open access)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 02.09.2016
Last edited 23.07.2017
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