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Title
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Dark field electron holography for quantitative strain measurements with nanometer-scale spatial resolution
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Author
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Abstract
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| Strain measurements on strained SiGe specimens have been performed using dark field electron holography. By combining the excellent stability of state-of-the-art electron microscopes with careful specimen preparation we have been able to acquire two-dimensional strain maps of the layers with a spatial resolution of 5 nm, a background noise of 2×10−4, an interference width of 1500 nm, and a field of view of more than 500×500 nm2. We also show that the strain measurements are quantitative to within experimental error. |
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Language
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English
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Source (journal)
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Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
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Publication
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New York, N.Y.
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American Institute of Physics
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2009
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ISSN
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0003-6951
[print]
1077-3118
[online]
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DOI
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10.1063/1.3196549
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Volume/pages
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95
(2009)
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Article Reference
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053501
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ISI
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000268809400085
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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