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Title
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Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography
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Author
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Abstract
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| The optical properties of semiconductor quantum dots are greatly influenced by their strain state. Dark field electron holography has been used to measure the strain in InAsquantum dotsgrown in InP with a spatial resolution of 1 nm. A strain value of 5.4% ± 0.1% has been determined which is consistent with both measurements made by geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images and with simulations. |
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Language
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English
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Source (journal)
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Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
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Publication
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New York, N.Y.
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American Institute of Physics
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2011
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ISSN
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0003-6951
[print]
1077-3118
[online]
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DOI
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10.1063/1.3672194
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Volume/pages
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99
(2011)
, p. 1-3
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Article Reference
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261911
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ISI
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000298638500027
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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