Publication
Title
Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy
Author
Abstract
Language
English
Source (journal)
Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
Publication
New York, N.Y. : American Institute of Physics, 2012
ISSN
0003-6951 [print]
1077-3118 [online]
Volume/pages
112(2012)
Article Reference
124505
ISI
000312829400128
Medium
E-only publicatie
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
External links
Web of Science
Record
Identification
Creation 07.11.2016
Last edited 06.08.2018