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Title
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Quantum-transport characteristics of a p-n junction on single-layer
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Author
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Abstract
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| By using density functional theory and non-equilibrium Green's function-based methods, we investigated the electronic and transport properties of a TiS3 monolayer p-n junction. We constructed a lateral p-n junction on a TiS3 monolayer using Li and F adatoms. An applied bias voltage caused significant variability in the electronic and transport properties of the TiS3 p-n junction. In addition, the spin-dependent current-volt-age characteristics of the constructed TiS3 p-n junction were analyzed. Important device characteristics were found, such as negative differential resistance and rectifying diode behaviors for spin-polarized currents in the TiS3 p-n junction. These prominent conduction properties of the TiS3 p-n junction offer remarkable opportunities for the design of nanoelectronic devices based on a recently synthesized single-layered material. |
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Language
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English
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Source (journal)
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ChemPhysChem : a European journal of chemical physics and physical chemistry. - Weinheim, 2000 - 2015
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Publication
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Weinheim
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Wiley-VCH
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2016
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ISSN
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1439-4235
[print]
1439-7641
[online]
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DOI
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10.1002/CPHC.201600751
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Volume/pages
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17
:23
(2016)
, p. 3985-3991
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ISI
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000389534800018
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Full text (Publisher's DOI)
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Full text (open access)
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Full text (publisher's version - intranet only)
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