Publication
Title
Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study
Author
Abstract
Language
English
Source (journal)
Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
Publication
New York, N.Y. : American Institute of Physics, 2016
ISSN
0003-6951 [print]
1077-3118 [online]
Volume/pages
108:4(2016), 5 p.
Article Reference
043504
ISI
000375217200061
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 16.08.2017
Last edited 07.08.2018
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