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Title
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Impact of layer alignment on the behavior of tunnel field-effect transistors : an ab initio study
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Author
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Abstract
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| Tunnel field-effect transistors based on van der Waals heterostructures are emerging device concepts for low-power applications, auguring sub-60 mV/dec subthreshold swing values. In these devices, the channel is built from a stack of several different two-dimensional materials whose nature allows tailoring the band alignments and enables a good electrostatic control of the device. In this work, we propose a theoretical study of the variability of the performances of a MoS2-ZrS2 tunnel field-effect transistor induced by fluctuations of the relative position or the orientation of the layers. Our results indicate that although a steep subthreshold slope (20 mV/dec) is achievable, fluctuations in the relative orientation of the ZrS2 layer with respect to the MoS2 one lead to a significant variability in the tunneling current by about one decade. This arises from changes in the orbital overlap between the layers and from the modulation of the transport direction. |
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Language
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English
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Source (journal)
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Physical review applied. - College Park, Md, 2014, currens
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Publication
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College Park, Md
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American Physical Society
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2017
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ISSN
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2331-7019
[Online]
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DOI
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10.1103/PHYSREVAPPLIED.8.034017
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Volume/pages
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8
:3
(2017)
, 7 p.
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Article Reference
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034017
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ISI
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000411460400001
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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Full text (open access)
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