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Title
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Mechanisms for plasma cryogenic etching of porous materials
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Author
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Abstract
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| Porous materials are commonly used in microelectronics, as they can meet the demand for continuously shrinking electronic feature dimensions. However, they are facing severe challenges in plasma etching, due to plasma induced damage. In this paper, we present both the plasma characteristics and surface processing during the etching of porous materials. We explain how the damage occurs in the porous material during plasma etching for a wide range of chuck temperatures and the responsible mechanism for plasma damage-free etching at cryogenic temperature, by a combination of experiments and numerical modeling. |
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Language
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English
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Source (journal)
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Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
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Publication
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New York, N.Y.
:
American Institute of Physics
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2017
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ISSN
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0003-6951
[print]
1077-3118
[online]
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DOI
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10.1063/1.4999439
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Volume/pages
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111
:17
(2017)
, 4 p.
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Article Reference
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173104
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ISI
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000413863400032
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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Full text (open access)
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Full text (publisher's version - intranet only)
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