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Title
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Self-consistent 30-band simulation approach for (non-)uniformly strained confined heterostructure tunnel field-effect transistors
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Author
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Abstract
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| Heterostructures of III-V materials under a mechanical strain are being actively researched to enhance the performance of the tunnel field-effect transistor (TFET). In scaled III-V device structures, however, the interplay between the effects of strain and quantum confinement on the semiconductor band structure and hence the performance is highly non-trivial. We have therefore developed a computationally efficient quantum mechanical simulator Pharos, which enables self-consistent full-zone k.p-based simulations of III-V TFETs under a general non-uniform strain. We present the self-consistent procedure and demonstrate it on confined staggered bandgap GaAs0.5Sb0.5/In0.53Ga0.47As TFETs. We find a large performance degradation due to size-induced quantum confinement compared to non-confined devices. We show that some performance can be regained either by applying a uniform biaxial tensile strain or through the non-uniform strain profile at a lattice-mismatched heterostructure. |
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Language
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English
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Source (journal)
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International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]. - Piscataway, NJ
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Simulation of Semiconductor Processes and, Devices (SISPAD)AND DEVICES (SISPAD 2017)
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Source (book)
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Proceedings of International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 07-09, 2017, Kamakura, JAPAN
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Publication
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New york
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Ieee
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2017
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ISBN
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978-4-86348-610-2
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978-4-86348-610-2
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DOI
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10.23919/SISPAD.2017.8085256
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Volume/pages
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(2017)
, p. 29-32
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ISI
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000426983300008
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Full text (Publisher's DOI)
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Full text (publisher's version - intranet only)
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