Publication
Title
Self-consistent 30-band simulation approach for (non-)uniformly strained confined heterostructure tunnel field-effect transistors
Author
Abstract
Heterostructures of III-V materials under a mechanical strain are being actively researched to enhance the performance of the tunnel field-effect transistor (TFET). In scaled III-V device structures, however, the interplay between the effects of strain and quantum confinement on the semiconductor band structure and hence the performance is highly non-trivial. We have therefore developed a computationally efficient quantum mechanical simulator Pharos, which enables self-consistent full-zone k.p-based simulations of III-V TFETs under a general non-uniform strain. We present the self-consistent procedure and demonstrate it on confined staggered bandgap GaAs0.5Sb0.5/In0.53Ga0.47As TFETs. We find a large performance degradation due to size-induced quantum confinement compared to non-confined devices. We show that some performance can be regained either by applying a uniform biaxial tensile strain or through the non-uniform strain profile at a lattice-mismatched heterostructure.
Language
English
Source (journal)
International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]. - Piscataway, NJ
Simulation of Semiconductor Processes and, Devices (SISPAD)AND DEVICES (SISPAD 2017)
Source (book)
Proceedings of International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 07-09, 2017, Kamakura, JAPAN
Publication
New york : Ieee , 2017
ISBN
978-4-86348-610-2
978-4-86348-610-2
Volume/pages
(2017) , p. 29-32
ISI
000426983300008
Full text (Publisher's DOI)
Full text (publisher's version - intranet only)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 29.03.2018
Last edited 23.09.2021
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