Publication
Title
Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structures
Author
Abstract
Epitaxially grown ultra-thin Si layers are often used to passivate Ge surfaces in the high-k gate module of (strained) Ge FinFET devices. We use Si4H10 as Si precursor as it enables epitaxial Si growth at temperatures down to 330 degrees C. C-V characteristics of blanket capacitors made on Ge virtual substrates point to the presence of an optimal Si thickness. In case of compressively strained Ge fin structures, the Si growth results in non-uniform and high strain levels in the strained Ge fin. These strain levels have been calculated for different shapes of the Ge fin and in function of the grown Si thickness. The high strain is the driving force for potential (unwanted) Ge surface reflow during the Si deposition. The Ge surface reflow is strongly affected by the strength of the H-passivation during Si-capping and can be avoided by carefully selected process conditions.
Language
English
Source (journal)
SEMICONDUCTOR PROCESS INTEGRATION 10
Source (book)
Symposium on Semiconductor Process Integration 10 held during the 232nd, Meeting of the Electrochemical-Society (ECS), OCT 01-05, 2017, National Harbor, MD
Publication
Pennington : Electrochemical soc inc , 2017
ISBN
978-1-62332-473-5
978-1-60768-821-1
978-1-62332-473-5
Volume/pages
80 :4 (2017) , p. 241-252
ISI
000426269800024
Full text (Publisher's DOI)
Full text (publisher's version - intranet only)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 29.03.2018
Last edited 24.10.2021
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