| Title |
|
|
|
Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structures
| |
| Author |
|
|
|
| |
| Abstract |
|
|
| | |
| Language |
|
|
|
English
| |
| Source (journal) |
|
|
|
SEMICONDUCTOR PROCESS INTEGRATION 10 | |
| Source (book) |
|
|
|
Symposium on Semiconductor Process Integration 10 held during the 232nd, Meeting of the Electrochemical-Society (ECS), OCT 01-05, 2017, National Harbor, MD | |
| Publication |
|
|
|
Pennington : Electrochemical soc inc, 2017
| |
| ISBN |
|
|
|
978-1-62332-473-5
| |
|
|
|
|
978-1-60768-821-1
978-1-62332-473-5
| |
| Volume/pages |
|
|
|
80:4(2017), p. 241-252
| |
| ISI |
|
|
|
000426269800024
| |
| Full text (Publisher's DOI) |
|
|
| | |
| Full text (publisher's version - intranet only) |
|
|
| | |
|