Publication
Title
Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations
Author
Abstract
In this contribution, we report a fundamental study of the factors that set the contact resistivity between metals and highly doped semiconductors. We investigate the case of n-type doped Si contacted with amorphous TiSi combining first-principles calculations with Non-Equilibrium Green functions transport simulations. The intrinsic contact resistivity is found to saturate at similar to 2x10(-10) Omega.cm(2) with the doping concentration and sets an intrinsic limit to the ultimate contact resistance achievable for n-doped Si vertical bar amorphous-TiSi. This limit arises from the intrinsic properties of the semiconductor and of the metal such as their electron effective masses and Fermi energies. We illustrate that, in this regime, contacting metals with a heavy electron effective mass helps reducing the interface intrinsic contact resistivity.
Language
English
Source (journal)
SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR
Source (book)
Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics, 15 - In Memory of Samares Ka held during the 232nd Meeting of the, Electrochemical-Society (ECS), OCT 01-05, 2017, National Harbor, MD
Publication
Pennington : Electrochemical soc inc , 2017
ISBN
978-1-60768-818-1
978-1-62332-470-4
978-1-60768-818-1
Volume/pages
80 :1 (2017) , p. 303-311
ISI
000426271800028
Full text (Publisher's DOI)
Full text (publisher's version - intranet only)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 29.03.2018
Last edited 13.09.2021
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