Title
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Surface passivation of CIGS solar cells using gallium oxide
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Author
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Abstract
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This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se-2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5nm passivation layer show an substantial absolute improvement of 56mV in open-circuit voltage (V-OC), 1mAcm(-2) in short-circuit current density (J(SC)), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G). |
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Language
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English
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Source (journal)
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Physica status solidi : A : applications and materials science. - -
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Publication
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2018
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ISSN
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1862-6300
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DOI
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10.1002/PSSA.201700826
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Volume/pages
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215
:7
(2018)
, 6 p.
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Article Reference
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1700826
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ISI
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000430128500015
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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