| Title |
|
|
|
Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO
|
|
| Author |
|
|
|
|
|
| Abstract |
|
|
| |
|
| Language |
|
|
|
English
|
|
| Source (journal) |
|
|
|
Journal of applied physics / American Institute of Physics. - New York, N.Y., 1937, currens |
|
| Publication |
|
|
|
Melville : Amer inst physics, 2018
|
|
| ISSN |
|
|
|
0021-8979 [print]
1089-7550 [online]
|
|
| Volume/pages |
|
|
|
123:16(2018), 7 p.
|
|
| Article Reference |
|
|
|
161513
|
|
| ISI |
|
|
|
000431147200043
|
|
| Note |
|
|
|
: 29th International Conference on Defects in Semiconductors (ICDS), JUL 31-AUG 04, 2017, Matsue, JAPAN
|
|
| Medium |
|
|
|
E-only publicatie
|
|
| Full text (Publisher's DOI) |
|
|
| |
|
| Full text (open access) |
|
|
| |
|
| Full text (publisher's version - intranet only) |
|
|
| |
|