Publication
Title
Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO
Author
Abstract
Language
English
Source (journal)
Journal of applied physics / American Institute of Physics. - New York, N.Y., 1937, currens
Publication
Melville : Amer inst physics, 2018
ISSN
0021-8979 [print]
1089-7550 [online]
Volume/pages
123:16(2018), 7 p.
Article Reference
161513
ISI
000431147200043
Note
General: 29th International Conference on Defects in Semiconductors (ICDS), JUL 31-AUG 04, 2017, Matsue, JAPAN
Full text (Publisher's DOI)
Full text (open access)
Full text (publisher's version - intranet only)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 12.06.2018
Last edited 19.09.2018
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