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Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO
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| Abstract |
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| Language |
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English
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| Source (journal) |
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Journal of applied physics / American Institute of Physics. - New York, N.Y., 1937, currens |
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| Publication |
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Melville : Amer inst physics, 2018
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| ISSN |
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0021-8979 [print]
1089-7550 [online]
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| Volume/pages |
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123:16(2018), 7 p.
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| Article Reference |
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161513
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| ISI |
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000431147200043
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| Note |
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: 29th International Conference on Defects in Semiconductors (ICDS), JUL 31-AUG 04, 2017, Matsue, JAPAN
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