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Title
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Band-tails tunneling resolving the theory-experiment discrepancy in Esaki diodes
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Author
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Abstract
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| Discrepancies exist between the theoretically predicted and experimentally measured performance of band-to-band tunneling devices, such as Esaki diodes and tunnel field-effect transistors (TFETs). We resolve this discrepancy for highly-doped, direct-bandgap Esaki diodes by successfully calibrating a semi-classical model for high-doping-induced ballistic band-tails tunneling currents at multiple temperatures with two In0.53Ga0.47As Esaki diodes using their SIMS doping profiles, C-V characteristics and their forward-bias current density in the negative differential resistance (NDR) regime. The current swing in the NDR regime is shown not to be linked to the band-tails Urbach energy. We further demonstrate theoretically that the calibrated band-tails contribution is also the dominant band-tails contribution to the subthreshold swing of the corresponding TFETs. Lastly, we verify that the presented procedure is applicable to all direct-bandgap semiconductors by successfully applying it to InAs Esaki diodes in literature. |
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Language
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English
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Source (journal)
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IEEE journal of the Electron Devices Society. - New York, N.Y., 2013, currens
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Publication
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New York, N.Y.
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IEEE, Electron Devices Society
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2018
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ISSN
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2168-6734
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DOI
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10.1109/JEDS.2018.2834825
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Volume/pages
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6
:1
(2018)
, p. 633-641
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ISI
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000435505000013
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Full text (Publisher's DOI)
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Full text (open access)
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