Publication
Title
On the electrostatic control achieved in transistors based on multilayered : a first-principles study
Author
Abstract
In this work, the electrostatic control in metal-oxide-semiconductor field-effect transistors based on MoS2 is studied, with respect to the number of MoS2 layers in the channel and to the equivalent oxide thickness of the gate dielectric, using first-principles calculations combined with a quantum transport formalism. Our simulations show that a compromise exists between the drive current and the electrostatic control on the channel. When increasing the number of MoS2 layers, a degradation of the device performances in terms of subthreshold swing and OFF currents arises due to the screening of the MoS2 layers constituting the transistor channel. Published by AIP Publishing.
Language
English
Source (journal)
Journal of applied physics / American Institute of Physics. - New York, N.Y., 1937, currens
Publication
New York, N.Y. : American Institute of Physics, 2017
ISSN
0021-8979 [print]
1089-7550 [online]
Volume/pages
121:4(2017), 6 p.
Article Reference
044505
ISI
000393480100030
Medium
E-only publicatie
Full text (Publisher's DOI)
Full text (open access)
UAntwerpen
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Research group
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Affiliation
Publications with a UAntwerp address
External links
Web of Science
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Creation 02.08.2018
Last edited 15.07.2021
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