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Title
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On the electrostatic control achieved in transistors based on multilayered : a first-principles study
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Author
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Abstract
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| In this work, the electrostatic control in metal-oxide-semiconductor field-effect transistors based on MoS2 is studied, with respect to the number of MoS2 layers in the channel and to the equivalent oxide thickness of the gate dielectric, using first-principles calculations combined with a quantum transport formalism. Our simulations show that a compromise exists between the drive current and the electrostatic control on the channel. When increasing the number of MoS2 layers, a degradation of the device performances in terms of subthreshold swing and OFF currents arises due to the screening of the MoS2 layers constituting the transistor channel. Published by AIP Publishing. |
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Language
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English
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Source (journal)
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Journal of applied physics / American Institute of Physics. - New York, N.Y., 1937, currens
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Publication
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New York, N.Y.
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American Institute of Physics
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2017
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ISSN
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0021-8979
[print]
1089-7550
[online]
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DOI
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10.1063/1.4974960
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Volume/pages
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121
:4
(2017)
, 6 p.
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Article Reference
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044505
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ISI
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000393480100030
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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Full text (open access)
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