Publication
Title
Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations
Author
Abstract
In this contribution, we report a fundamental study of the factors that set the contact resistivity between metals and highly doped n-type 2D and 3D semiconductors. We investigate the case of n-type doped Si contacted with amorphous TiSi combining first principles calculations with Non-Equilibrium Green functions transport simulations. The evolution of the intrinsic contact resistivity with the doping concentration is found to saturate at similar to 2 x 10(-10) Omega.cm(2) for the case of TiSi and imposes an intrinsic limit to the ultimate contact resistance achievable for n-doped Silamorphous-TiSi (aTiSi). The limit arises from the intrinsic properties of the semiconductors and of the metals such as their electron effective masses and Fermi energies. We illustrate that, in this regime, contacting heavy electron effective mass metals with semiconductor helps reducing the interface intrinsic contact resistivity. This observation seems to hold true regardless of the 3D character of the semiconductor, as illustrated for the case of three 2D semiconducting materials, namely MoS2, ZrS2 and HfS2. (C) The Author(s) 2018. Published by ECS.
Language
English
Source (journal)
ECS journal of solid state science and technology / Electrochemical Society. - Pennington (N.J.), s.a.
Publication
Pennington (N.J.) : Electrochemical society , 2018
ISSN
2162-8769
2162-8777
Volume/pages
7 :6 (2018) , p. N73-N80
ISI
000440836000004
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Project info
TAKEMI5: Technology Advances and Key Enablers for Module Integration for 5 nm
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 07.09.2018
Last edited 20.09.2021
To cite this reference