Title
Structural characterisation of erbium silicide thin films of an Si(111) substrate
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Amsterdam ,
Subject
Physics
Chemistry
Engineering sciences. Technology
Source (journal)
Journal of alloys and compounds. - Amsterdam
Volume/pages
234(1996) :2 , p. 244-250
ISSN
0925-8388
ISI
A1996TX65100020
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
ErSi2-x films (x = 0.1-0.3) grown by co-evaporation at different deposition ratios have been characterised by transmission electron microscopy, electron diffraction and high resolution electron microscopy. A very good epitaxial growth relation with the Si substrate was deduced for a1 samples and observed phases. Different defect modulated structures are formed; they can be described as structural variants (orthorhombic or rhombohedral) of the basic structure. The modulated phases are related to deviations from stoichiometry similar to crystallographic shear structures. The ErSi1.9 material contains Si precipitates, illustrating the preference for the ErSi1.7 composition to be maintained.
E-info
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Handle