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Title
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Interfacial oxidation and photoluminescence of InP-Based core/shell quantum dots
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Author
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Abstract
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| Indium phosphide colloidal quantum dots (QDs) are emerging as an efficient cadmium-free alternative for optoelectronic applications. Recently, syntheses based on easy-to-implement aminophosphine precursors have been developed. We show by solid-state nuclear magnetic resonance spectroscopy that this new approach allows oxide-free indium phosphide core or core/shell quantum dots to be made. Importantly, the oxide-free core/shell interface does not help in achieving higher luminescence efficiencies. We demonstrate that in the case of InP/ZnS and InP/ZnSe QDs, a more pronounced oxidation concurs with a higher photoluminescence efficiency. This study suggests that a II-VI shell on a III-V core generates an interface prone to defects. The most efficient InP/ZnS or InP/ZnSe QDs are therefore made with an oxide buffer layer between the core and the shell: it passivates these interface defects but also results in a somewhat broader emission line width. |
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Language
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English
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Source (journal)
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Chemistry of materials / American Chemical Society. - Washington, D.C., 1989, currens
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Publication
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Washington, D.C.
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2018
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ISSN
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0897-4756
[print]
1520-5002
[online]
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DOI
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10.1021/ACS.CHEMMATER.8B03117
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Volume/pages
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30
:19
(2018)
, p. 6877-6883
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ISI
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000447237800031
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Full text (Publisher's DOI)
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Full text (open access)
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