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Title
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Phonon-assisted tunneling in direct-bandgap semiconductors
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Author
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Abstract
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| In tunnel field-effect transistors, trap-assisted tunneling (TAT) is one of the probable causes for degraded subthreshold swing. The accurate quantum-mechanical (QM) assessment of TAT currents also requires a QM treatment of phonon-assisted tunneling (PAT) currents. Therefore, we present a multi-band PAT current formalism within the framework of the quantum transmitting boundary method. An envelope function approximation is used to construct the electron-phonon coupling terms corresponding to local Frohlich-based phonon-assisted inter-band tunneling in direct-bandgap III-V semiconductors. The PAT current density is studied in up to 100 nm long and 20 nm wide p-n diodes with the 2- and 15-band material description of our formalism. We observe an inefficient electron-phonon coupling across the tunneling junction. We further demonstrate the dependence of PAT currents on the device length, for our non-self-consistent formalism which neglects changes in the electron distribution function caused by the electron-phonon coupling. Finally, we discuss the differences in doping dependence between direct band-to-band tunneling and PAT current. Published under license by AIP Publishing. |
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Language
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English
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Source (journal)
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Journal of applied physics / American Institute of Physics. - New York, N.Y., 1937, currens
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Publication
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New York, N.Y.
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American Institute of Physics
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2019
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ISSN
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0021-8979
[print]
1089-7550
[online]
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DOI
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10.1063/1.5044256
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Volume/pages
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125
:1
(2019)
, 10 p.
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Article Reference
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015701
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ISI
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000455350200021
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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Full text (publisher's version - intranet only)
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