Publication
Title
Interplay of 2D and 3D charge carriers in Si-δ-doped InSb layers grown epitaxially on GaAs
Author
Language
English
Source (journal)
Solid state electronics. - Oxford
Publication
Oxford : 1996
ISSN
0038-1101
Volume/pages
40(1996), p. 395-398
ISI
A1996UN20700083
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 08.10.2008
Last edited 14.06.2017
To cite this reference