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Title
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Controlling the interfacial conductance in in 90 degrees off-axis sputter deposition
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Author
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Abstract
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| We report on the fabrication of conducting interfaces between LaAlO3 and SrTiO3 by 90 degrees off-axis sputtering in an Ar atmosphere. At a growth pressure of 0.04 mbar the interface is metallic, with a carrier density of the order of 1 x 10(13) cm(-2) at 3 K. By increasing the growth pressure, we observe an increase of the out-of-plane lattice constants of the LaAlO3 films while the in-plane lattice constants do not change. Also, the low-temperature sheet resistance increases with increasing growth pressure, leading to an insulating interface when the growth pressure reaches 0.10 mbar. We attribute the structural variations to an increase of the La/Al ratio, which also explains the transition from metallic behavior to insulating behavior of the interfaces. Our research shows that the control which is furnished by the Ar pressure makes sputtering as versatile a process as pulsed laser deposition, and emphasizes the key role of the cation stoichiometry of LaAlO3 in the formation of the conducting interface. |
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Language
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English
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Source (journal)
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Physical review materials / American Physical Society. - College Park, Md, 2017, currens
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Publication
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College Park, Md
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American Physical Society
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2019
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ISSN
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2475-9953
[online]
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DOI
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10.1103/PHYSREVMATERIALS.3.034002
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Volume/pages
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3
:3
(2019)
, 4 p.
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Article Reference
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034002
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ISI
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000461077100002
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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