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Title
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First-principles perspective on poling mechanisms and ferroelectric/antiferroelectric behavior of for FEFET applications
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Author
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Abstract
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| We investigate at the atomic level the most probable phase transformations under strain, that are responsible for the ferroelectric/ antiferroelectric behavior in Hf1-xZrxO2 materials. Four different crystalline phase transformations exhibit a polar/non-polar transition: monoclinic-to-orthorhombic requires a gliding strain tensor, orthorhombic-to-orthorhombic transformation does not need strain to polarize the material, whereas tetragonal-to-cubic cell compression and tetragonal-to-orthorhombic cell elongation destabilizes the non-polar tetragonal phase, facilitating the transition towards a polar atomic configuration, therefore changing the polarization-electric field loop from antiferroelectric to ferroelectric. Oxygen vacancies can reduce drastically the polarization reversal barriers. |
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Language
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English
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Source (journal)
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2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
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Source (book)
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64th IEEE Annual International Electron Devices Meeting (IEDM), DEC 01-05, 2018, San Francisco, CA
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Publication
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New york
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Ieee
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2018
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ISBN
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978-1-72811-987-8
978-1-72811-987-8
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DOI
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10.1109/IEDM.2018.8614552
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Volume/pages
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(2018)
, 4 p.
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ISI
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000459882300073
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Full text (publisher's version - intranet only)
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