Publication
Title
Electron Bessel beam diffraction for precise and accurate nanoscale strain mapping
Author
Abstract
Strain has a strong effect on the properties of materials and the performance of electronic devices. Their ever shrinking size translates into a constant demand for accurate and precise measurement methods with a very high spatial resolution. In this regard, transmission electron microscopes are key instruments thanks to their ability to map strain with a subnanometer resolution. Here, we present a method to measure strain at the nanometer scale based on the diffraction of electron Bessel beams. We demonstrate that our method offers a strain sensitivity better than 2.5 × 10−4 and an accuracy of 1.5 × 10−3, competing with, or outperforming, the best existing methods with a simple and easy to use experimental setup.
Language
English
Source (journal)
Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
Related dataset(s)
Publication
New York, N.Y. : American Institute of Physics , 2019
ISSN
0003-6951 [print]
1077-3118 [online]
DOI
10.1063/1.5096245
Volume/pages
114 :24 (2019) , 5 p.
Article Reference
243501
ISI
000472599100019
Medium
E-only publicatie
Full text (Publisher's DOI)
Full text (open access)
UAntwerpen
Faculty/Department
Research group
Project info
Compressed sensing enabling low dose imaging in transmission electron microscopy.
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identifier
Creation 20.06.2019
Last edited 02.10.2024
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