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Title
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Material relaxation in chalcogenide OTS SELECTOR materials
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Author
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Abstract
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| Nature of the mobility-gap states in amorphous Ge-rich Ge50Se50 was found to be related to homopolar Ge bonds in the chains/clusters of Ge atoms. Threshold switching material suffers Ge-Ge bond concentration drift during material ageing, which can explain the observed reliability of the aGe(50)Se(50) selector devices. Strong Ge-N bonds were introduced to alleviate the observed instability. |
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Language
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English
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Source (journal)
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Microelectronic engineering. - Amsterdam
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Publication
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Amsterdam
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2019
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ISSN
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0167-9317
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DOI
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10.1016/J.MEE.2019.110996
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Volume/pages
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215
(2019)
, 5 p.
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Article Reference
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110996
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ISI
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000480665600008
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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Full text (publisher's version - intranet only)
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