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Title
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Titanium (germano-)silicides featuring Ω. contact resistivity and improved compatibility to advanced CMOS technology
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Author
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Abstract
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| uIn this work, we discuss three novel Ti (germano-)silicidation techniques featuring respectively the pre-contact amorphization implantation (PCAI), the TiSi co-deposition, and Ti atomic layer deposition (ALD). All three techniques form TiSix(Ge-y) contacts with ultralow contact resistivity (rho(c)) of (1-3)x10(-9) Omega.cm(2) on both highly doped n-Si and p-SiGe substrates: these techniques meet rho(c) requirement of 5-14 nm CMOS technology and feature unified CMOS contact solutions. We further discuss the compatibility of these techniques to the realistic CMOS transistor fabrication. |
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Language
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English
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Source (journal)
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2018 18TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)
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Source (book)
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18th International Workshop on Junction Technology (IWJT), MAR 08-09, 2018, Shanghai, PEOPLES R CHINA
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Publication
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New york
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Ieee
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2018
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ISBN
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978-1-5386-4511-6
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978-1-5386-4511-6
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Volume/pages
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(2018)
, p. 80-84
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ISI
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000502768600020
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Full text (publisher's version - intranet only)
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