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Title
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High on/off ratio memristive switching of manganite/cuprate bilayer by interfacial magnetoelectricity
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Author
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Abstract
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| Memristive switching serves as the basis for a new generation of electronic devices. Conventional memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies. Memristors based on alternative mechanisms have been explored, but achieving both high on/off ratio and low switching energy, as needed in applications, remains a challenge. This study reports memristive switching in La0.7Ca0.3MnO3/PrBa2Cu3O7 bilayers with an on/off ratio greater than 10(3) and results of density functional theory calculations in terms of which it is concluded that the phenomenon is likely the result of a new type of interfacial magnetoelectricity. More specifically, this study shows that an external electric field induces subtle displacements of the interfacial Mn ions, which switches on/off an interfacial magnetic dead layer, resulting in memristive behavior for spin-polarized electron transport across the bilayer. The interfacial nature of the switching entails low energy cost, about of a tenth of atto Joule for writing/erasing a bit. The results indicate new opportunities for manganite/cuprate systems and other transition metal oxide junctions in memristive applications. |
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Language
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English
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Source (journal)
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Advanced Materials Interfaces. - -
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Publication
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2016
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ISSN
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2196-7350
[online]
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DOI
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10.1002/ADMI.201600086
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Volume/pages
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3
:16
(2016)
, 8 p.
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Article Reference
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1600086
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ISI
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000383783200003
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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