|
Title
|
|
|
|
Dislocation core structures in (0001) InGaN
| |
|
Author
|
|
|
|
| |
|
Abstract
|
|
|
|
| Threading dislocation core structures in c-plane GaN and InxGa1-xN (0.057 <= x <= 0.20) films were investigated by aberration-corrected scanning transmission electron microscopy. a-type dislocations are unaffected by alloying with indium and have a 5/7-atom ring core structure in both GaN and InxGa1-xN. In contrast, the dissociation lengths of (a+c)-type dislocations are reduced, and new 7/4/9-atom ring and 7/4/8/5-atom ring core structures were observed for the dissociated (a+c)-type dislocations in InxGa1-xN, which is associated with the segregation of indium near (a+c)-type and c-type dislocation cores in InxGa1-xN, consistent with predictions from atomistic Monte Carlo simulations. (C) 2016 AIP Publishing LLC. |
| |
|
Language
|
|
|
|
English
| |
|
Source (journal)
|
|
|
|
Journal of applied physics / American Institute of Physics. - New York, N.Y., 1937, currens
| |
|
Publication
|
|
|
|
New York, N.Y.
:
American Institute of Physics
,
2016
| |
|
ISSN
|
|
|
|
0021-8979
[print]
1089-7550
[online]
| |
|
DOI
|
|
|
|
10.1063/1.4942847
| |
|
Volume/pages
|
|
|
|
119
:10
(2016)
, 7 p.
| |
|
Article Reference
|
|
|
|
105301
| |
|
ISI
|
|
|
|
000372976900027
| |
|
Medium
|
|
|
|
E-only publicatie
| |
|
Full text (Publisher's DOI)
|
|
|
|
| |
|