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Title
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Dislocation core structures in Si-doped GaN
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Author
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Abstract
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| Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaN films with a range of Si-doping levels and dislocation densities ranging between (5 +/- 1) x 10(8) and (10 +/- 1) x 10(9) cm(-2). All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN. (C) 2015 AIP Publishing LLC. |
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Language
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English
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Source (journal)
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Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
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Publication
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New York, N.Y.
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American Institute of Physics
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2015
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ISSN
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0003-6951
[print]
1077-3118
[online]
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DOI
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10.1063/1.4937457
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Volume/pages
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107
:24
(2015)
, 5 p.
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Article Reference
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243104
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ISI
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000367318600044
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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