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Title
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Segregation of In to Dislocations in InGaN
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Author
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Abstract
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| Dislocations are one-dimensional topological defects that occur frequently in functional thin film materials and that are known to degrade the performance of InxGa1-xN-based optoelectronic devices. Here, we show that large local deviations in alloy composition and atomic structure are expected to occur in and around dislocation cores in InxGa1-xN alloy thin films. We present energy-dispersive X-ray spectroscopy data supporting this result. The methods presented here are also widely applicable for predicting composition fluctuations associated with strain fields in other inorganic functional material thin films. |
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Language
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English
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Source (journal)
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Nano letters / American Chemical Society. - Washington
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Publication
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Washington
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2015
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ISSN
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1530-6984
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DOI
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10.1021/NL5036513
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Volume/pages
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15
:2
(2015)
, p. 923-930
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ISI
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000349578000019
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Full text (Publisher's DOI)
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