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Title
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S-Te Interdiffusion within Grains and Grain Boundaries in CdTe Solar Cells
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Author
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Abstract
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| At the CdTe/CdS interface, a significant Te-S interdiffusion has been found a few nanometers into the CdTe grain interiors with scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy. This interdiffusion happens on both as-grown and CdCl2 -treated CdTe. S substitution at Te sites has been directly resolved in CdTe with STEM Z-contrast images, which further confirms the S diffusion into CdTe grain interiors. Moreover, when a sufficient amount of S substitutes for Te, a structural transformation from zinc-blende to wurtzite has been observed. In the CdCl2 treated CdTe, Cl segregation has also been found at the interface. STEM electron-beam-induced current shows that the p-n junction occurs a few namometers into the CdTe grains, which is consistent with the S diffusion range we observe. The shift of the p-n junction suggests a buried homojunction which would help reduce nonradiative recombination at the junction. Meanwhile, long-range S diffusion in CdTe grain boundaries (GBs) has been detected, as has Te and Cl diffusion in CdS GBs. |
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Language
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English
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Source (journal)
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IEEE journal of photovoltaics
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Publication
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2014
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ISSN
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2156-3381
2156-3403
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DOI
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10.1109/JPHOTOV.2014.2351622
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Volume/pages
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4
:6
(2014)
, p. 1636-1643
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ISI
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000344542900048
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Full text (Publisher's DOI)
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