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Title
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Carrier separation at dislocation pairs in CdTe
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Author
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Abstract
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| Through the use of aberration corrected scanning transmission electron microscopy, the atomic configuration of CdTe intragrain Shockley partial dislocation pairs has been determined: Single Cd and Te columns are present at opposite ends of both intrinsic and extrinsic stacking faults. These columns have threefold and fivefold coordination, indicating the presence of dangling bonds. Counterintuitively, density-functional theory calculations show that these dislocation cores do not act as recombination centers; instead, they lead to local band bending that separates electrons and holes and reduces undesirable carrier recombination. |
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Language
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English
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Source (journal)
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Physical review letters. - New York, N.Y., 1958, currens
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Publication
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New York, N.Y.
:
American Physical Society
,
2013
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ISSN
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0031-9007
[print]
1079-7114
[online]
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DOI
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10.1103/PHYSREVLETT.111.096403
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Volume/pages
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111
:9
(2013)
, 5 p.
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Article Reference
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096403
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ISI
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000323716100007
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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