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Title
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Thermal-strain-engineered ferromagnetism of LaMnO₃/SrTiO₃ heterostructures grown on silicon
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Author
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Abstract
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| The integration of oxides on Si remains challenging, which largely hampers the practical applications of oxide-based electronic devices with superior performance. Recently, LaMnO3/SrTiO3 (LMO/STO) heterostructures have gained renewed interest for the debating origin of the ferromagnetic-insulating ground state as well as for their spin-filter applications. Here we report on the structural and magnetic properties of high-quality LMO/STO heterostructures grown on silicon. The chemical abruptness across the interface was investigated by atomic-resolution scanning transmission electron microscopy. The difference in the thermal expansion coefficients between LMO and Si imposed a large biaxial tensile strain to the LMO film, resulting in a tetragonal structure with c/a similar to 0.983. Consequently, we observed a significantly suppressed ferromagnetism along with an enhanced coercive field, as compared to the less distorted LMO film (c/a similar to 1.004) grown on STO single crystal. The results are discussed in terms of tensile-strain enhanced antiferromagnetic instabilities. Moreover, the ferromagnetism of LMO on Si sharply disappeared below a thickness of 5 unit cells, in agreement with the LMO/STO case, pointing to a robust critical behavior irrespective of the strain state. Our results demonstrate that the growth of oxide films on Si can be a promising way to study the tensile-strain effects in correlated oxides, and also pave the way towards the integration of multifunctional oxides on Si with atomic-layer control. |
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Language
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English
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Source (journal)
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Physical review materials / American Physical Society. - College Park, Md, 2017, currens
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Publication
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College Park, Md
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American Physical Society
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2020
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ISSN
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2475-9953
[online]
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DOI
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10.1103/PHYSREVMATERIALS.4.024406
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Volume/pages
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4
:2
(2020)
, p. 1-7
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Article Reference
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024406
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ISI
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000513552900003
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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