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Title
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YBa₂Cu₃O₇-x films with Ba₂Y(Nb,Ta)O-₆ nanoinclusions for high-field applications
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Author
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Abstract
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| The structural and transport properties of YBa2Cu3O7-x films grown by pulsed laser deposition with mixed 2.5 mol% Ba2YTaO6 (BYTO) and 2.5 mol% Ba2YNbO6 (BYNO) double-perovskite secondary phases are investigated in an extended film growth rate, R = 0.02-1.8 nm s(-1). The effect of R on the film microstructure analyzed by TEM techniques shows an evolution from sparse and straight to denser, thinner and splayed continuous columns, with mixed BYNO + BYTO (BYNTO) composition, as R increases from 0.02 nm s(-1) to 1.2 nm s(-1). This microstructure results in very efficient flux pinning at 77 K, leading to a remarkable improvement in the critical current density (J(c)) behaviour, with the maximum pinning force density F-p(Max) = 13.5 GN m(-3) and the irreversibility field in excess of 11 T. In this range, the magnetic field values at which the F-p is maximized varies from 1 T to 5 T, being related to the BYNTO columnar density. The film deposited when R = 0.3 nm s(-1) exhibits the best performances over the whole temperature and magnetic field ranges, achieving F-p(Max) = 900 GN m(-3) at 10 K and 12 T. At higher rates, R > 1.2 nm s(-1), BYNTO columns show a meandering nature and are prone to form short nanorods. In addition, in the YBCO film matrix a more disordered structure with a high density of short stacking faults is observed. From the analysis of the F-p(H, T) curves it emerges that in films deposited at the high R limit, the vortex pinning is no longer dominated by BYNTO columnar defects, but by a new mechanism showing the typical temperature scaling law. Even though this microstructure produces a limited improvement at 77 K, it exhibits a strong J(c) improvement at lower temperature with F-p = 700 GN m(-3) at 10 K, 12 T and 900 GN m(-3) at 4.2 K, 18 T. |
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Language
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English
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Source (journal)
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Superconductor science and technology. - Bristol
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Publication
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Bristol
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2020
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ISSN
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0953-2048
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DOI
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10.1088/1361-6668/AB6EE5
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Volume/pages
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33
:4
(2020)
, p. 1-13
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Article Reference
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044010
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ISI
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000525650500001
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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Full text (open access)
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Full text (publisher's version - intranet only)
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