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Title
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Signature of ballistic band-tail tunneling current in tunnel FET
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Author
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Abstract
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| To improve the interpretation of the tunnel field-effect transistor (TFET) measurements, we theoretically identify the signatures of the ballistic band-tail (BT) tunneling (BTT) current in the transfer and output characteristics of the TFETs. In particular, we demonstrate that the temperature dependence of a BTT-dominated subthreshold swing (SS) is in agreement with the reported experimental results. We explain how the temperature dependence of the output characteristics can be used to distinguish between a current dominated by BTT and a current dominated by trap-assisted tunneling. Finally, we propose an expression that relates the energetic extension of the quasi-extended BT states in the bandgap to the onset voltage for tunneling. |
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Language
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English
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Source (journal)
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IEEE transactions on electron devices. - New York, N.Y.
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Publication
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New York, N.Y.
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2020
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ISSN
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0018-9383
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DOI
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10.1109/TED.2020.3004119
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Volume/pages
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67
:8
(2020)
, p. 3486-3491
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ISI
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000552976100072
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Full text (Publisher's DOI)
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Full text (publisher's version - intranet only)
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