Publication
Title
Charge transport in magnetic topological ultra-thin films : the effect of structural inversion asymmetry
Author
Abstract
We study the effect of structural inversion asymmetry, induced by the presence of substrates or by external electric fields, on charge transport in magnetic topological ultra-thin films. We consider general orientations of the magnetic impurities. Our results are based on the Boltzmann formalism along with a modified relaxation time scheme. We show that the structural inversion asymmetry enhances the charge transport anisotropy induced by the magnetic impurities and when only one conduction subband contributes to the charge transport a dissipationless charge current is accessible. We demonstrate how a substrate or gate voltage can control the effect of the magnetic impurities on the charge transport, and how this depends on the orientation of the magnetic impurities.
Language
English
Source (journal)
Journal of physics : condensed matter. - London
Publication
London : 2021
ISSN
0953-8984
DOI
10.1088/1361-648X/AC0669
Volume/pages
33 :32 (2021) , 11 p.
Article Reference
325702
ISI
000666698000001
Pubmed ID
34049289
Medium
E-only publicatie
Full text (Publisher's DOI)
Full text (publisher's version - intranet only)
UAntwerpen
Faculty/Department
Research group
Project info
The quest for the ground state of two-dimensional III-V semiconductors.
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identifier
Creation 30.07.2021
Last edited 02.10.2024
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