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Title
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Carrier density and delocalization signatures in doped carbon nanotubes from quantitative magnetic resonance
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Author
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Abstract
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| High-performance semiconductor materials and devices are needed to supply the growing energy and computing demand. Organic semiconductors (OSCs) are attractive options for opto-electronic devices, due to their low cost, extensive tunability, easy fabrication, and flexibility. Semiconducting single-walled carbon nanotubes (s-SWCNTs) have been extensively studied due to their high carrier mobility, stability and opto-electronic tunability. Although molecular charge transfer doping affords widely tunable carrier density and conductivity in s-SWCNTs (and OSCs in general), a pervasive challenge for such systems is reliable measurement of charge carrier density and mobility. In this work we demonstrate a direct quantification of charge carrier density, and by extension carrier mobility, in chemically doped s-SWCNTs by a nuclear magnetic resonance approach. The experimental results are verified by a phase-space filling doping model, and we suggest this approach should be broadly applicable for OSCs. Our results show that hole mobility in doped s-SWCNT networks increases with increasing charge carrier density, a finding that is contrary to that expected for mobility limited by ionized impurity scattering. We discuss the implications of this important finding for additional tunability and applicability of s-SWCNT and OSC devices. |
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Language
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English
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Source (journal)
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Nanoscale Horizons
Nanoscale horizons / Royal Society of Chemistry (Great Britain); Guo jia na mi ke xue zhong xin (China) - [Cambridge, England], 2016, currens
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Publication
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The Royal Society of Chemistry
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2024
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ISSN
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2055-6756
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DOI
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10.1039/D3NH00480E
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Volume/pages
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9
:2
(2024)
, p. 278-284
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ISI
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001112647000001
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Pubmed ID
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38044846
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Full text (Publisher's DOI)
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Full text (open access)
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