Publication
Title
Quantum transport study of contact resistance of edge- and top-contacted two-dimensional materials
Author
Abstract
We calculate the contact resistance for an edge- and top-contacted 2D semiconductor. The contact region consists of a metal contacting a monolayer of MoS2 which is otherwise surrounded by SiO2. We use the quantum transmitting boundary method to compute the contact resistance as a function of the 2D semiconductor doping concentration. An effective mass Hamiltonian is used to describe the properties of the various materials. The electrostatic potentials are obtained by solving the Poisson equation numerically. We incorporate the effects of the image-force barrier lowering on the Schottky barrier and examine the impact on the contact resistance. At low doping concentrations, the contact resistance of the top contact is lower compared to edge contact, while at high doping concentrations, the edge contact exhibits lower resistance.
Language
English
Source (journal)
International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]. - Piscataway, NJ
Source (book)
International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 27-29, 2023, Kobe, Japan
Publication
New york : Ieee , 2023
ISBN
978-4-86348-803-8
DOI
10.23919/SISPAD57422.2023.10319537
Volume/pages
(2023) , p. 45-48
ISI
001117703800012
Full text (Publisher's DOI)
Full text (publisher's version - intranet only)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identifier
Creation 01.02.2024
Last edited 02.04.2024
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