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Title
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LPE growth and characterization of InGaAsP/InP heterostructures: IR-emitting diodes at 1.66 μm: application to the remote monitoring of methane gas
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Author
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Abstract
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| Highly effective IR light-emitting diodes operating at the wavelength 1.66 mu m and based on the buried heterostructure In0.88Ga0.12As0.26P0.74/ In0.72Ga0.28As0.62P0.38/In0.53Ga0.47As/InP have been grown by liquid-phase epitaxy (LPE) and characterized in detail by means of transmission electron microscopy (TEM), high-resolution electron microscopy (HREM),electron diffraction (ED), X-ray diffraction (XRD), secondary-ion mass spectrometry (SIMS) and electroluminescence measurements. The InGaAsP epilayers are found to be well lattice matched and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in InGaAsP alloys. A new type of selective CK, gas sensor has been developed and fabricated an the basis of the IR light-emitting diode mentioned above. Especially designed for the remote control of CH4 gas via fibre optics, an integrated optoelectronic readout scheme has been developed and tested, It is shown that the proposed type of sensor can be used for the quantitative remote control of CH4 gas concentration (0.2-100%) via a fibre glass line up to a distance of 2 x 1 km. (C) 1997 Elsevier Science S.A. |
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Language
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English
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Source (journal)
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Sensors and actuators. - Lausanne, 1981 - 1989
Sensors and actuators : A : physical. - Lausanne, 1990, currens
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Publication
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Lausanne
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1997
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ISSN
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0250-6874
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DOI
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10.1016/S0924-4247(97)01377-0
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Volume/pages
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62
:1/3
(1997)
, p. 624-632
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ISI
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A1997YD90600029
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Full text (Publisher's DOI)
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Full text (publisher's version - intranet only)
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