Title
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Stabilizing perovskite thin films by fast deposition and tensile mismatched growth template
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Author
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Abstract
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Because of its low hysteresis, high dielectric constant, and strong piezoelectric response, Pb(Mg1/3Nb2/3)O-3-PbTiO3 (PMN-PT) thin films have attracted considerable attention for the application in PiezoMEMS, field-effect transistors, and energy harvesting and storage devices. However, it remains a great challenge to fabricate phase-pure, pyrochlore-free PMN-PT thin films. In this study, we demonstrate that a high deposition rate, combined with a tensile mismatched template layer can stabilize the perovskite phase of PMN-PT films and prevent the nucleation of passive pyrochlore phases. We observed that an accelerated deposition rate promoted mixing of the B-site cation and facilitated relaxation of the compressively strained PMN-PT on the SrTiO3 (STO) substrate in the initial growth layer, which apparently suppressed the initial formation of pyrochlore phases. By employing La-doped-BaSnO3 (LBSO) as the tensile mismatched buffer layer, 750 nm thick phase-pure perovskite PMN-PT films were synthesized. The resulting PMN-PT films exhibited excellent crystalline quality close to that of the STO substrate. |
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Language
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English
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Source (journal)
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ACS applied materials and interfaces. - -
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Publication
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2024
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ISSN
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1944-8244
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DOI
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10.1021/ACSAMI.3C16241
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Volume/pages
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16
:10
(2024)
, p. 12744-12753
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ISI
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001176343700001
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Pubmed ID
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38420766
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Full text (Publisher's DOI)
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Full text (open access)
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