Title
The formation of 3C-SiC in crystalline Si by carbon implantation at <tex>$950^{0}C$</tex> and annealing: a structural study The formation of 3C-SiC in crystalline Si by carbon implantation at <tex>$950^{0}C$</tex> and annealing: a structural study
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Amsterdam ,
Source (journal)
Journal of crystal growth. - Amsterdam
Volume/pages
181(1997) , p. 218-228
ISSN
0022-0248
Carrier
E
Target language
English (eng)
Affiliation
University of Antwerp
Handle