Publication
Title
The formation of 3C-SiC in crystalline Si by carbon implantation at and annealing: a structural study
Author
Language
English
Source (journal)
Journal of crystal growth. - Amsterdam
Publication
Amsterdam : 1997
ISSN
0022-0248
Volume/pages
181(1997), p. 218-228
UAntwerpen
Faculty/Department
Research group
Publication type
Affiliation
Publications with a UAntwerp address
External links
Record
Identification
Creation 08.10.2008
Last edited 10.07.2013
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