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Title
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Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE
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Author
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Language
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English
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Source (journal)
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Physica status solidi: B: basic research. - Berlin
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Publication
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Berlin
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1999
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ISSN
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0370-1972
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DOI
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10.1002/(SICI)1521-3951(199911)216:1<571::AID-PSSB571>3.0.CO;2-K
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Volume/pages
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216
(1999)
, p. 571-576
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ISI
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000084193900110
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Full text (Publisher's DOI)
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