Title
Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Berlin ,
Source (journal)
Physica status solidi: B: basic research. - Berlin
Volume/pages
216(1999) , p. 571-576
ISSN
0370-1972
ISI
000084193900110
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
E-info
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