Title
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Modeling of bombardment induced oxidation of silicon
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Author
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Language
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English
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Source (journal)
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Journal of applied physics / American Institute of Physics. - New York, N.Y., 1937, currens
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Publication
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New York, N.Y.
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American Institute of Physics
,
2001
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ISSN
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0021-8979
[print]
1089-7550
[online]
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DOI
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10.1063/1.1344581
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Volume/pages
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89
:5
(2001)
, p. 3001-3011
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ISI
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000167133000077
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Full text (Publisher's DOI)
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