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Title
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Free-carrier effects in gallium nitride epilayers: Valence-band dispersion
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Author
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Abstract
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| The dispersion of the A-valence-band in GaN has been deduced from the observation of high-index magnetoexcitonic states in polarized interband magnetoreflectivity and is found to be strongly nonparabolic with a mass in the range 1.2-1.8m(e). It matches the theory of Kim et al. [Phys. Rev. B 56, 7363 (1997)] extremely well, which also gives a strong k-dependent A-valence-band mass. A strong phonon coupling leads to quenching of the observed transitions at about an LO-phonon energy above the band gap and a strong nonparabolicity. The valence band was deduced from subtracting from the reduced dispersion the electron contribution with a model that includes a full treatment of the electron-phonon interaction. |
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Language
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English
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Source (journal)
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Physical review : B : condensed matter and materials physics. - Lancaster, Pa, 1998 - 2015
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PHYSICAL REVIEW B
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Publication
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Lancaster, Pa
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2001
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ISSN
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1098-0121
[print]
1550-235X
[online]
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DOI
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10.1103/PHYSREVB.64.081203
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Volume/pages
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64
:8
(2001)
, p. 155303
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ISI
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000170623000005
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Full text (Publisher's DOI)
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