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Title
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InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy
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Author
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Language
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English
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Source (journal)
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Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
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Publication
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New York, N.Y.
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American Institute of Physics
,
1992
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ISSN
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0003-6951
[print]
1077-3118
[online]
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DOI
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10.1063/1.106490
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Volume/pages
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60
(1992)
, p. 868-870
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ISI
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A1992HD74800027
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Full text (Publisher's DOI)
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