Title
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InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy
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Author
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Language
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English
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Source (journal)
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Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
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Publication
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New York, N.Y.
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American Institute of Physics
,
1992
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ISSN
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0003-6951
[print]
1077-3118
[online]
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DOI
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10.1063/1.106711
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Volume/pages
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600
:26
(1992)
, p. 3256-3258
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ISI
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A1992JA80600019
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Full text (Publisher's DOI)
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