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Title
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Ion-bombardment artifact in TOF-SIMS analysis of stacks
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Author
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Abstract
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| We analyzed ultra-thin ZrO2/SiO2/Si gate dielectrics under post-deposition anneals in dry O-2 at temperatures from 500 to 700 degreesC. TOF-SIMS profiling of ZrO2/SiO2/Si stacks is hampered by many sputter induced artifacts. The depletion of oxygen leads to a decrease in SIMS intensities. However, preferential sputtering is accompanied by transport of the depleted species towards the surface. Due to recoil implantation oxygen gets piled-up near the ZrO2/SiO2 interface. Either normal or radiation-enhanced diffusion transports oxygen back to the surface. Simultaneously also segregation of zirconium towards and through the interface is observed, resulting in a large zirconium tail in the underlying silicon substrate. (C) 2002 Elsevier Science B.V. All rights reserved. |
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Language
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English
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Source (journal)
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Applied surface science. - Amsterdam
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Publication
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Amsterdam
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Elsevier science bv
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2003
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ISSN
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0169-4332
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DOI
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10.1016/S0169-4332(02)00728-6
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Volume/pages
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203
(2003)
, p. 523-526
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ISI
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000180527300119
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Full text (Publisher's DOI)
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